27 vtb process photodiode vtb1112b h , 1113bh product description small area planar silicon photodiode in a lensed, dual lead to-46 package. the package incorporates an infrared rejection filter. cathode is common to the case. these diodes have very high shunt resistance and have good blue response. package dimensions inch (mm) case 19 to-46 lensed hermetic chip active area: .0025 in 2 (1.60 mm 2 ) absolute maximum ratings storage temperature: -40c to 110c operating temperature: -40c to 110c electro-optical characteristics @ 25c (see also vtb curves, pages 21-22) symbol characteristic test conditions vtb1112bh vt b1113bh units min. typ. max. min. typ. max. i sc short circuit current h = 100 fc, 2850 k 3.0 6.0 3.0 6.0 a tc i sc i sc temperature coefficient 2850 k .02 .08 .02 .08 %/c v oc open circuit voltage h = 100 fc, 2850 k 420 420 mv tc v oc v oc temperature coefficient 2850 k -2.0 -2.0 mv/c i d dark current h = 0, vr = 2.0 v 100 20 pa r sh shunt resistance h = 0, v = 10 mv .25 7.0 g ? tc r sh r sh temperature coefficient h = 0, v = 10 mv -8.0 -8.0 %/c c j junction capacitance h = 0, v = 0 .31 .31 nf range spectral application range 330 720 330 720 nm p spectral response - peak 580 580 nm v br breakdown voltage 2 40 2 40 v 1/2 angular resp. - 50% resp. pt. 15 15 degrees nep noise equivalent power 5.3 x 10 -14 (typ.) 1.1 x 10 -14 (typ.) d* specific detectivity 2.4 x 10 12 (typ.) 1.2 x 10 13 (typ.) whz ? cm hz w ? excelitas technologies, 22001 dumberry, vaudreuil, canada j7v 8p7 phone: 877-734-6786 fax: 450-424-3413 w ww.excelitas.com
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